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Study of Random Telegraph Noise for P-type Omega-Gate Nanowire FET

  • 양근수 (Geunsoo Yang, 대학원 전자·정보공학과 ICT융합기술전공)

초록/요약

In this paper, the overall study of low-frequency noise (LFN) and random telegraph noise (RTN) signal are studied with effect of RTN by high-pressure deuterium annealing (HPDA) for p-type omega-gate nanowire (OGNW) FET. Chapter 1 shows history of semiconductor with various processes to overcome short channel effects (SCEs) and improve device performance. Especially strain engineering, high-k/metal gate, multi-gate structure are introduced. Also, noise components, especially by LFN and RTN, are studied in metal-oxide-semiconductor (MOS) device. In chapter 2, we studied the effect of HPDA on p-type omega-gate nanowire field effect transistor by RTN signal analysis. After HPDA under the condition of 400 °C and 10 atm for 30 minutes, in RTN analysis, multi-level RTN is reduced to single-level due to the passivation of a fast trap site by HPDA. In LFN analysis, after HPDA, the noise levels are decreased at all overdrive voltage by significant reduction of trap density. Also, DC characteristics are improved in off-current, on-current, and subthreshold swing. Through these results, it might be helpful to optimize device AC performance by improving interface quality between gate dielectric and channel.

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목차

1. Introduction 1
1.1 History of semiconductor 1
1.1.1 Strain engineering 4
1.1.2 High-k / metal-gate 6
1.1.3 Multi gate FET 9
1.2 Noise in MOS device 10
1.2.1 Low frequency noise 11
1.2.2 Random telegraph noise signals 15
2. The effect of HPDA for p-type OGNW FET 20
2.1 Device fabrication 20
2.2 Experiment details. 22
2.3 The effect of HPDA on p-type OGNW FET 24
2.3.1 DC characteristics 24
2.3.2 RTN characteristics 26
2.3.3 LFN characteristics 34
3. Summary 36
4. Reference 37
5. Appendix 41

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