Manufacturing Fluorescent Nanodiamonds (FNDs) via Plasma Immersion Ion Implantation (PIII) Technique
플라즈마 이온주입 기반 형광나노다이아몬드 제조기술
- 주제(키워드) fluorescent nanodiamond , nanodiamond , detonation nanodiamond , plasma ion implantation
- 발행기관 고려대학교 대학원
- 지도교수 임상호
- 지도교수 한승희
- 발행년도 2020
- 학위수여년월 2020. 8
- 학위구분 석사
- 학과 대학원 신소재공학과
- 원문페이지 76 p
- UCI I804:11009-000000232070
- DOI 10.23186/korea.000000232070.11009.0001169
- 본문언어 영어
초록/요약
The purpose of this study is to introduce a much more efficient and economic Fluorescent Nanodiamond (FND) fabrication method by employing the Plasma Immersion Ion Implantation (PIII) technique and using detonation nanodiamonds (DNDs) as the starting material. DNDs were irradiated with energetic nitrogen ions at various doses to create vacancies in the crystal lattice. Through annealing the sample at 900 °C for 30 minutes in vacuum, Nitrogen Vacancy (NV) centers were formed. Subsequently, 8 h oxidation at 450 °C in oxygen atmosphere was performed to remove thick graphitic shells induced by irradiation and annealing. They were then treated with a mixture of hydrofluoric and nitric acids, and finally rinsed with water. The processed DND samples emit bright fluorescence with their photoluminescence peaks centered at 600 nm. Atomic force microscopy, transmission electron microscope, and X-ray diffraction size measurements showed that the average diameter of the treated samples is ~ 5 nm. X-ray photoelectron spectroscopy results also showed that the nitrogen ion implanted samples contain 26.9% higher nitrogen content than the as-produced DNDs. Electron Paramagnetic Resonance analysis demonstrates that the 7.5 min ion implanted FND sample contains twice as much NV- content than the non-irradiated one.
more목차
1. Introduction 1
2. Background 5
2.1. Fabrication Procedures of Fluorescent Nanodiamonds 5
2.2. PIII (Plasma Immersion Ion Implantation) 9
2.3. Mesh-assisted Plasma Immersion Ion Implantation 13
3. Experimental 15
3.1 Equipment 15
3.2. Experimental procedures 17
3.2.1. Materials 17
3.2.2. Nitrogen ion implantation using PIII 17
3.2.3. Annealing, Oxidation, and Rinsing 18
3.3. Characterization methods 19
3.3.1. Photoluminescence 19
3.3.2. Atomic Force Microscopy 21
3.3.3 Raman Spectroscopy 23
3.3.4. X-ray Diffraction Analysis 23
3.3.5. Transmission Electron Microscopy 24
3.3.6. X-ray Photoelectron Spectroscopy 24
3.3.7. Electron Paramagnetic Resonance Spectroscopy 25
4. Results and Discussion 26
4.1. Photoluminescence 26
4.2. Atomic Force Microscopy 31
4.3. Raman Spectroscopy 34
4.4. X-ray Diffraction Analysis 36
4.5 Transmission Electron Microscopy 41
4.6 X-ray Photoelectron Spectroscopy 43
4.7 Electron Paramagnetic Resonance Spectroscopy 48
5. Conclusions 56
6. References 57
