바나듐이 도핑된 NiO 다공성 구조의 고감도 Trimethylamine 감응 특성 : Highly Sensitive Trimethylamine Sensing Characteristics of V-doped NiO Porous Structures
Highly Sensitive Trimethylamine Sensing Characteristics of V-doped NiO Porous Structures
- 주제(키워드) V-doped NiO , porous structures , trimethylamine sensor , electronic sensitization , acid-base reaction
- 발행기관 한국센서학회
- 발행년도 2016
- 총서유형 Journal
- UCI G704-000913.2016.25.3.005
- KCI ID ART002111846
- 본문언어 한국어
초록/요약
Pure and V-doped NiO porous structures were prepared by the evaporation-induced surfactant assembly and subsequent pyrolysis of assembled structures, and their gas sensing characteristics were investigated. Pure NiO porous structures showed negligible gas responses (S=Rg/Ra, Rg: sensor resistance in analytic gas; Ra: sensor resistance in air) to 5 ppm trimethylamine (S=1.17) as well as other interfering gases such as ethanol, p-xylene, toluene, benzene and formaldehyde (S=1.02-1.13). In contrast, the V-doped NiO porous structures exhibited a high response and selectivity to 5 ppm trimethylamine (S=14.5) with low cross-responses to other interfering gases (S=4.0-8.7) at 350oC. The high gas response of V-doped NiO porous structures to trimethylamine was explained by electronic sensitization, that is, the increase in the chemoresistive variation due to the decrease in the hole concentration. The enhanced selectivity to trimethylamine was discussed in relation to the interaction between basic trimethylamine gas and acidic V catalysts.
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