Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process
Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process
- 주제(키워드) Oxide thin film transistors , SiInZnO , Solution process
- 발행기관 한국전기전자재료학회
- 발행년도 2015
- 총서유형 Journal
- UCI G704-001065.2015.16.1.004
- KCI ID ART001961284
- 본문언어 영어
초록/요약
Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect ofannealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibitedsaturation mobility of 1.37 cm2 /Vs, a threshold voltage of -7.2 V, and an on-off ratio of 1.1 × 105.
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