Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer
Effect of Deposition Temperature on Cubic Boron Nitride Thin Film Deposited by Unbalanced Magnetron Sputtering Method with a Nanocrystalline Diamond Buffer Layer
- 주제(키워드) cubic boron nitride (c-BN) , sputtering , microstructure , residual stress , transmission electron microscopy
- 발행기관 대한금속·재료학회
- 발행년도 2013
- 총서유형 Journal
- UCI G704-000797.2013.19.6.034
- KCI ID ART001818766
- 본문언어 영어
초록/요약
Cubic boron nitride (c-BN) films were deposited by the unbalanced magnetron sputtering method. A Si substrates coated with a nanocrystalline diamond (NCD) was used as a substrate. The deposition temperature was varied systematically from room temperature to 800 °C. A boron nitride target was used which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing. The c-BN phase forms for all samples, irrespective of the deposition temperature, with a little amount of hexagonal phase existing as an intrinsic turbostratic boron nitride (t-BN) layer, whose thickness decreased with increasing temperature. The residual stress was maintained at a nearly constant compressive value. The adhesion improved markedly at high deposition temperature, but the insertion of the NCD buffer layer was ineffective in inhibiting the formation of t-BN layer under the present deposition condition.
more