Substitution mechanism of Ga for Zn site depending on deposition temperature for transparent conducting oxides
Substitution mechanism of Ga for Zn site depending on deposition temperature for transparent conducting oxides
- 주제(키워드) Zinc oxide , Ga-doped ZnO , Transparent conducting oxide , X-ray photoelectron spectroscopy
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.6.012
- KCI ID ART001756362
- 본문언어 영어
초록/요약
High quality transparent conductive gallium-doped zinc oxide (GZO) thin films were deposited on glass substrates using rf-magnetron sputtering system at the temperature ranging from room temperature (RT) to 500 ℃. The temperature-dependence of Ga doping effect on the structural, optical and electrical properties in ZnO has been investigated. For the GZO thin films deposited at over 200 ℃, (103) orientation was strongly observed by X-ray diffraction analysis, which is attributed to the substitution of Ga elements into Zn site. X-ray photoelectron spectroscopy measurements have confirmed that oxygen vacancies were generated at the temperature higher than 300 ℃. This might be due to the effective substitution of Ga3þ for Zn site at higher temperature. It was also found that the optical band gap increases with deposition temperature. The optical transmittance of GZO thin films was above 87% in the visible region. The GZO thin films grown at 500 ℃ showed a low electrical resistivity of 4.50 × 10-4 U cm,a carrier concentration of 6.38 × 1020 cm-3 and a carrier mobility of 21.69 cm2/V.
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