Carrier transport mechanism of strained AlGaN/GaN Schottky contacts
Carrier transport mechanism of strained AlGaN/GaN Schottky contacts
- 주제(키워드) Carrier transport , Schottky barrier height , AlGaN/GaN
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.4.021
- KCI ID ART001682610
- 본문언어 영어
초록/요약
Using polarization field effect-based thermionic field emission (PFE-TFE) model based on currente voltageetemperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al0.25Ga0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaNeGaN interface at T ≥ 293 K.
more