Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
- 주제(키워드) Dilute magnetic semiconductor , Ferromagnetic , Copper implantation , ZnO
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.3.056
- KCI ID ART001663719
- 본문언어 영어
초록/요약
1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 1017 ions/cm2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at roomtemperature and the saturation magnetization of this sample was estimated to be 0.12 mB per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9)state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 ℃ on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase.
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