Investigation of electronic and optical properties in Al-Ga codoped ZnO thin films
Investigation of electronic and optical properties in Al-Ga codoped ZnO thin films
- 주제(키워드) Transparent conducting oxide , Al-Ga codoped ZnO , Fermi-level shift , Optical-bandgap
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.3.032
- KCI ID ART001662614
- 본문언어 영어
초록/요약
Electronic and optical properties of Al-Ga codoped ZnO thin films were investigated by post-annealing. The lowest resistivity of the AleGa codoped ZnO films was observed from the 450 ℃-annealed sample. The Fermi-level shift of the Al-Ga codoped ZnO film was w0.6 eV from x-ray photoelectron spectroscopy,and the widening of optical-bandgap in the Al-Ga codoped ZnO film wasw0.3 eV. The correlations of optical-bandgap with Fermi-level shift and conduction band filling were suggested by schematic band diagrams.
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