Epitaxial Structure Optimization of Nonpolar a-plane GaN Light-emitting Diodes
Epitaxial Structure Optimization of Nonpolar a-plane GaN Light-emitting Diodes
- 주제(키워드) Nonpolar , Gallium-nitride (GaN) , Epitaxial structure , Multiple quantum-wells (MQW) , Lightemitting diodes (LEDs)
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-000411.2012.60.8.019
- KCI ID ART001652342
- 본문언어 영어
초록/요약
In this research, the number of quantum well (QW) were optimized to improve the device performance of nonpolar a-plane (11–20) GaN light-emitting diodes (LEDs). Based on a theoretical consideration, we applied four periods of 3.5-nm-thick In0.23Ga0.77N quantum wells and 6-nm-thick GaN quantum barriers in order to reduce the carrier overflow and thereby to increase the radiative recombination rates. As a result, we found that the radiative recombination rate was increased by 29% at 20 mA while the forward voltage and the light output-power were improved by 7.4% and 12.3%, respectively, compared with a single QW nonpolar a-plane GaN LED.
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