Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method
Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method
- 주제(키워드) ZnO , Excimer laser , Laser annealing
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.2.042
- KCI ID ART001644489
- 본문언어 영어
초록/요약
Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH3COO)2], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (l ¼ 248, KrF) source with energy density of 50 mJ/cm2 for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.
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