Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes
Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes
- 주제(키워드) N-polar n-type GaN , Ohmic contact , Cr/Al , Vertical light-emitting diode
- 발행기관 한국물리학회
- 발행년도 2012
- 총서유형 Journal
- UCI G704-001115.2012.12.1.052
- KCI ID ART001629289
- 본문언어 영어
초록/요약
We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9e2.3 × 10-4 Ucm2. Upon annealing at 250 ℃ for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 103 Ucm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results,ohmic formation and degradation mechanisms are briefly described and discussed.
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