Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode
Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode
- 주제(키워드) Quantum dot laser , Separate confinement hetero structure , InAlAs/AlGaAs
- 발행기관 한국광학회
- 발행년도 2011
- 총서유형 Journal
- UCI G704-001213.2011.15.2.002
- KCI ID ART001557916
- 본문언어 영어
초록/요약
Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure)heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.
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