Fabrication of Nanometer-scale Pillar Structures by Using Nanosphere Lithography
Fabrication of Nanometer-scale Pillar Structures by Using Nanosphere Lithography
- 주제(키워드) Gallium nitride (GaN) , Light-emitting diode (LED) , Nanosphere lithography (NSL)
- 발행기관 한국물리학회
- 발행년도 2011
- 총서유형 Journal
- UCI G704-000411.2011.58.42.017
- KCI ID ART001545370
- 본문언어 영어
초록/요약
In this work, we have successfully fabricated a periodic array of the nanospheres so that one could control the on/off ratio of the pitch and the shape of the nanoscale pillar structures. Next, evenly-spaced polystyrene nanospheres were used nanostructures on the GaN, sapphire and silicon substrates by using a nanosphere lithography. First, a polystyrene nanosphere monolayer with a diameter of 500 nm was spin-coated on the substrates; then, an oxygen plasma was applied to the monolayer using a reactive ion etching system to make spacings among as a mask for inductivelycoupled plasma reactive ion etching to make nanoscale pillar structures of different shapes and depths on the substrates. These experimental results are expected to offer a milestone for the application of nanostructures to various semiconductor devices.
more