Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process
Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process
- 주제(키워드) Silica nanowires , Nickel silicide , Rapid-thermal-annealing
- 발행기관 한국물리학회
- 발행년도 2011
- 총서유형 Journal
- UCI G704-001115.2011.11.2.002
- KCI ID ART001537233
- 본문언어 영어
초록/요약
We report on the growth of NiSi_2-catalyzed amorphous SiO_2 nanowires by rapid-thermal-annealing of Ni (40 nm)/poly-Si(60 nm)/SiO_2(110 nm)/undoped Si substrate structures at 900 ℃ in N_2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi_2 catalyst particles; the former is about 16―45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO_2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.
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