On the Dry Etch Mechanisms of Y_2O_3, SiO_2, and Si_3N_4 in Cl_2/BCl_3 Inductively Coupled Plasma
On the Dry Etch Mechanisms of Y_2O_3, SiO_2, and Si_3N_4 in Cl_2/BCl_3 Inductively Coupled Plasma
- 주제(키워드) Y_2O_3 , Etch rate , Dissociation , Ionization , Etch mechanism , Plasma modeling
- 발행기관 한국물리학회
- 발행년도 2011
- 총서유형 Journal
- UCI G704-000411.2011.58.3.009
- KCI ID ART001535069
- 본문언어 영어
초록/요약
This paper deals with a model-based study of Y_2O_3, SiO_2, and Si_3N_4 etch mechanisms in a Cl_2/BCl_3 inductively coupled plasma. Both etching and plasma diagnostics experiments were carried out at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W) and bias power (300 W) while the gas mixing ratio was used as the variable parameter. The Y_2O_3 etch rate was found to increase by more than 2 times for 0 - 100% BCl_3 in the Cl_2/BCl_3 gas mixture while both the SiO_2 and the Si_3N_4 etch rates exhibited a maximum at 40 - 50% BCl_3. Using a model-based analysis of the plasma chemistry and the etch kinetics, the behavior of the Y_2O_3 etch rate was demonstrated to correspond to the ion-flux-limited etch region while the etch kinetics were significantly influenced by the presence BClx radicals. The non-monotonic behaviors of the SiO_2 and the Si_3N_4 etch rates may result from the concurrence of chemical and physical etch pathways in a transitional region.
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