I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
- 주제(키워드) Single Ni nanowire Voltage-applied atomic force microscopy Electrical resistance
- 발행기관 한국물리학회
- 발행년도 2010
- 총서유형 Journal
- UCI G704-001115.2010.10.4.034
- KCI ID ART001467934
- 본문언어 영어
초록/요약
We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 ㎛ and diameter of 20 nm.
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