급속 열처리 온도 변화에 따른 AZO 박막의 구조, 전기 및 광학적 특성 : Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature
Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature
- 주제(키워드) AZO , Thin film , RF magnetron sputtering , Rapid thermal annealing
- 발행기관 한국전기전자재료학회
- 발행년도 2010
- 총서유형 Journal
- UCI G704-000026.2010.23.4.010
- KCI ID ART001435335
- 본문언어 한국어
초록/요약
We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to 600℃ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at 400℃ shows the lowest electrical resistivity of 8.6×10-3 Ω㎝ and the Hall mobility of 11.3 cm²/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.
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