Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
- 주제(키워드) GaN Nanowire Electric field Alignment
- 발행기관 한국물리학회
- 발행년도 2010
- 총서유형 Journal
- UCI G704-001115.2010.10.2.055
- KCI ID ART001437414
- 본문언어 영어
초록/요약
This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current–voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts,confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz–5 MHz.
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