Effect of the N2/(Ar+N2) Flow Ratio on the Synthesis of Zirconium Nitride Thin Films by DC Reactive Sputtering
Effect of the N2/(Ar+N2) Flow Ratio on the Synthesis of Zirconium Nitride Thin Films by DC Reactive Sputtering
- 주제(키워드) Zirconium nitride (ZrN) , DC reactive sputtering , Grain growth , Stoichiometry
- 발행기관 한국물리학회
- 발행년도 2009
- 총서유형 Journal
- UCI G704-000411.2009.55.3.007
- KCI ID ART001497468
- 본문언어 영어
초록/요약
We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μΩ·cm to 1291.87 μΩ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.
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