반응성 DC 마그네트론 스퍼터링으로 Fe3O4 박막 제조에 관한 연구 : Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering
Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering
- 주제(키워드) Fe3O4 film , half metallic reactive sputtering
- 발행기관 대한금속·재료학회
- 발행년도 2009
- 총서유형 Journal
- UCI G704-000085.2009.47.6.006
- KCI ID ART001353699
- 본문언어 한국어
초록/요약
We investigated the effects of deposition conditions on the fabrication of Fe3O4 thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated Fe3O4 film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the Fe3O4 film were 298 emu/cc, 4.0×10−2 Ωcm, and 125 K, respectively.
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