Schottky-type polycrystalline CdZnTe X-ray detectors
Schottky-type polycrystalline CdZnTe X-ray detectors
- 주제(키워드) Polycrystalline , CdZnTe , X-ray detector , Schottky diode , Leakage current
- 발행기관 한국물리학회
- 발행년도 2009
- 총서유형 Journal
- UCI G704-001115.2009.9.3.064
- KCI ID ART001326410
- 본문언어 영어
초록/요약
The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ωcm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/㎠) at 40 V due to its high barrier height (φb = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.
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