Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma
Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma
- 주제(키워드) Cl2/HBr , ICP , ITO , QMS , Langmuir probe system
- 발행기관 한국전기전자재료학회
- 발행년도 2009
- 총서유형 Journal
- UCI G704-001065.2009.10.1.003
- KCI ID ART001319631
- 본문언어 영어
초록/요약
Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using Cl2/HBr inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the HBr/Cl2 plasma was analyzed.
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