Selective placement of single-walled carbon nanotubes on pre-defined micro-patterns on SiO2 surface based on a dry lift-off technique
Selective placement of single-walled carbon nanotubes on pre-defined micro-patterns on SiO2 surface based on a dry lift-off technique
- 주제(키워드) Nanomaterial , Poly-para-xylylene C , Dry lift-off removal , Deposition , Micro-scale patterns
- 발행기관 한국물리학회
- 발행년도 2009
- 총서유형 Journal
- UCI G704-001115.2009.9.11.010
- KCI ID ART001326107
- 본문언어 영어
초록/요약
We reported a new technique for self-assembly of selective placement of carbon nanotubes (CNT) on predefined micro-patterns. Our work based on the use of a poly-para-xylylene C passivation layer on silicon dioxide (SiO2) surface which was micro-patterned by reactive ion etching (RIE) process and follow by the CNT deposition step. The lift-off of poly-para-xylylene layer then was carried out relying on a dry lift-off method in order to remove the nanotubes adsorbed on the poly-para-xylylene layer leaving the CNT on the desirable areas. CNT located at specific micro-areas with pre-defined patterns from 50 ㎛ down to less than 10 ㎛ line width and variable shapes. This approach provides a simple and useful means allow controlled placement of CNT which is necessary for the large-scale fabrication of electronic devices.
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