Group III-nitride radial heterojunction nanowire light emitters
Group III-nitride radial heterojunction nanowire light emitters
- 주제(키워드) III-nitride , Nanowire , Defect.
- 발행기관 한양대학교 세라믹연구소
- 발행년도 2008
- 총서유형 Journal
- UCI G704-001111.2008.9.6.012
- KCI ID ART001468093
- 본문언어 영어
초록/요약
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
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