Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3
Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3
- 주제(키워드) plasma etching , GaN , self-assembly , block copolymer thin films
- 발행기관 대한금속·재료학회
- 발행년도 2008
- 총서유형 Journal
- UCI G704-SER000000579.2008.4.4.003
- KCI ID ART001294374
- 본문언어 영어
초록/요약
We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.
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