On the Etching Mechanism of Parylene-C in Inductively Coupled O₂ Plasma
On the Etching Mechanism of Parylene-C in Inductively Coupled O₂ Plasma
- 주제(키워드) Parylene-C , Oxygen plasma , Etching mechanism , Plasma modeling
- 발행기관 한국전기전자재료학회
- 발행년도 2008
- 총서유형 Journal
- UCI G704-001065.2008.9.4.002
- KCI ID ART001270498
- 본문언어 영어
초록/요약
We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an O₂ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O(³P). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.
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