Effect of Growth Temperature on the Properties of Hydrogenated Al-Doped ZnO Films
Effect of Growth Temperature on the Properties of Hydrogenated Al-Doped ZnO Films
- 주제(키워드) Al-doped ZnO , rf magnetron sputer , TCO , Hydrogenated
- 발행기관 한국물리학회
- 발행년도 2008
- 총서유형 Journal
- UCI G704-000411.2008.53.1.014
- KCI ID ART001464097
- 본문언어 영어
초록/요약
This study examined the e ect of deposition temperature on the electrical and the optical properties of thin- lm hydrogenated zinc oxide doped with aluminum (AZO:H) fabricated by radio frequency magnetron sputering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO:H lms were prepared on glas over a substrate temperature range from room temperature to 250 C. The intentional incorporation of hydrogen was shown to play an important role in the electrical properties of the AZO:H lms by increasing the fre carier concentration. The addition of 2 % H2 in Ar at a growth temperature of 150 C produced an AZO:H lm with excelent electrical properties and a resistivity of 3.21×10-4Ω cm. TheUV-measurementsshowedthatthe optical transmision of the AZO:H lms was above 86 % in the visible range with a wide optical band gap.
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