Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma : Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma
Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma
- 주제(키워드) Ge$_2$Sb$_2$Te$_5$ (GST) , SiO$_2$ , Photoresist , Cl$_2$/Ar ICP , Etch rate , Etch mechanism
- 발행기관 한국물리학회
- 발행년도 2007
- 총서유형 Journal
- UCI G704-000411.2007.51.5.020
- KCI ID ART001194998
- 본문언어 영어
초록/요약
This work reports investigations of the etch characteristics and mechanisms for Ge$_2$Sb$_2$Te$_5$ (GST), SiO$_2$ and a photoresist (PR) in a Cl$_2$/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl$_2$/Ar mixing ratio (43 -- 86 \% Ar), the gas pressure (4 -- 10 mTorr), the source power (400 -- 700 W), and the bias power (50 -- 300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO$_2$ is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO$_2$ by C$_x$H$_y$ radicals resulting from the decomposition of the PR.
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