Cl2-Ar 혼합가스를 이용한 GST 박막의 유도결합 플라즈마 식각 : Etching Characteristics of GST Thin Films using Inductively Coupled Plasma of Cl2/Ar Gas Mixtures
Etching Characteristics of GST Thin Films using Inductively Coupled Plasma of Cl2/Ar Gas Mixtures
초록/요약
In this work, the etching characteristics of Ge2Sb2Te5(GST) thin films were investigated using an inductively coupled plasma (ICP) of Cl2/Ar gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over SiO2 films was obtained and the selectivity over photoresist films decreased with increasing the Ar fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.
more