Fabrication and Characterization of a Nano-Device with V2O5 Nanowires
Fabrication and Characterization of a Nano-Device with V2O5 Nanowires
- 주제(키워드) Nanowires , V$_2$O$_5$ , Metal-insulator-semiconductor , Tunneling device
- 발행기관 한국물리학회
- 발행년도 2007
- 총서유형 Journal
- UCI G704-000411.2007.50.6.036
- KCI ID ART001194424
- 본문언어 영어
초록/요약
We fabricated nano-devices with V$_2$O$_5$ nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V$_2$O$_5$ nanowires on $p$-type Si substrates, HfO$_2$ dielectrics and Au gate were deposited on the V$_2$O$_5$ nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, Au nano-electrodes with a 30 nm gap were fabricated on a SiO$_2$/Si substrate by using electron-beam lithography. This device with V$_2$O$_5$ nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V$_2$O$_5$ nanowires for memory and tunneling devices may be feasible
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