Optical Properties of Europium-Silicate Thin Films Fabricated on Different SiOx Intermediate Layer
Optical Properties of Europium-Silicate Thin Films Fabricated on Different SiOx Intermediate Layer
- 주제(키워드) Europium silicate , rf-sputtering , Rapid thermal annealing , Photoluminescence
- 발행기관 한국물리학회
- 발행년도 2007
- 총서유형 Journal
- UCI G704-000411.2007.50.6.048
- KCI ID ART001063047
- 본문언어 영어
초록/요약
We report the effect of SiO$_x$ intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu$_2$O$_3$/SiO$_x$/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100 $^{\circ}\mathrm{C}$ by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiO$_x$ layer: sputtering using a SiO$_2$ target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O$_2$ gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiO$_x$ interlayer sputtered from a SiO$_2$ target. In comparison, a PL peak at 570 nm was observed in the sample where SiO$_x$ layer had been deposited by reactive sputtering from a Si target.
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