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열처리 분위기에 따른 유로퓸 실리케이트 박막의 특성 변화 : Property Changes of Europium-Silicate Thin Films depending on the Ambient Gas

Property Changes of Europium-Silicate Thin Films depending on the Ambient Gas

초록/요약

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from Eu3+ ions was observed from the film annealed in O2 ambient. Broad PL spectra associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at 1000 ℃ in N2 ambient.

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