Doping Effects of Lead on CdZnTe Crystals
Doping Effects of Lead on CdZnTe Crystals
- 주제(키워드) CdZnTe , Heavy metal doping , II-VI semiconductor , Compensation , High resistivity , X-ray de-tector
- 발행기관 한국물리학회
- 발행년도 2006
- 총서유형 Journal
- UCI G704-000411.2006.49.III.103
- KCI ID ART001193848
- 본문언어 영어
초록/요약
CdZnTe crystals doped with lead (Pb) in the concentration range of 1016 ≫ 1019 cm¡3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were veri.ed by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a com- pensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 ≫ 1011 ￠cm and showed higher dark-current stability.
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