선택적 분자선 에피택시 방법에 의한1D-2DEG 혼성 나노선 FET의 구현 : Realization of 1D-2DEG Composite Nanowire FET bySelective Area Molecular Beam Epitaxy
Realization of 1D-2DEG Composite Nanowire FET bySelective Area Molecular Beam Epitaxy
- 주제(키워드) 3D-heterostructures , Nanowire , Field-effect transistor , Molecular beam epitaxy , 3D-heterostructures , Nanowire , Field-effect transistor , Molecular beam epitaxy
- 발행기관 한국전기전자재료학회
- 발행년도 2006
- 총서유형 Journal
- UCI G704-000026.2006.19.11.008
- KCI ID ART001089562
초록/요약
High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of carrier transport. MBE growth parameters such as substrate temperature, Ⅴ/Ⅲ ratio, growth ratio, group Ⅴ sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence (-PL) measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.
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