Electrical Properties of V2O5 (Vanadium Pentoxide) Nanowires
Electrical Properties of V2O5 (Vanadium Pentoxide) Nanowires
- 주제(키워드) Nanowires , V2O5 (vanadium pentoxide) , Metal-insulator-semiconductorI. INTRODUCTIONNanowires have been attracting scientic and tech-nological interest owing to their noble structures andpotential as future nano-electronic components [1 , 2].Also the p
- 발행기관 한국물리학회
- 발행년도 2006
- 총서유형 Journal
- UCI G704-000411.2006.49.3.045
- KCI ID ART001025177
- 본문언어 영어
초록/요약
We fabricated a metal-insulator-semiconductor (MIS) structure with V2O5 nanowires on p-type Si substrates that have been pretreated with 3-aminopropyltriethoxysilane (3-APS) for better adsorption of the nanowires by using a quenching method. The V2O5 nanowires synthesized by using the gel/sol method showed semiconductor properties. For the MIS structure, 50 nm of poly-methylmethcrylate (PMMA) was spin coated on the V2O5 nanowires; then, a Au gate was deposited. The electrical properties of this structure were characterized by using a capacitance-voltage (C-V) measurements. The typical C-V hysteresis appeared at room temperature in the samples treated using a piranah solution for 30 s and 45 s then, the voltage gaps were measured to be about 5 V and 7.5 V, respectively. These electrical properties show the feasibility of using V2O5 nanowires for a memory device.
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