단일 ZnO 나노선 4단자 소자의 전기적 특성 : Electrical Properties of a Single ZnO Nanowire in a Four-probe Configuration
Electrical Properties of a Single ZnO Nanowire in a Four-probe Configuration
- 주제(키워드) ZnO nanowire , Field effect transistor , Contact resistance , Four-probe device , ZnO nanowire , Field effect transistor , Contact resistance , Four-probe device
- 발행기관 한국전기전자재료학회
- 발행년도 2005
- 총서유형 Journal
- UCI G704-000026.2005.18.12.014
- KCI ID ART000977619
초록/요약
Four-probe device of single ZnO nanowire was fabricated by electron beam lithography. Electrical characterizations in a two-probe and a four-probe configuration with a back-gate were carried out to clarify the relative contribution of the contact and the intrinsic part in a ZnO nanowire. I-V characteristic in four-probe measurement showed an ohmic behavior with a high conductivity, 100 S/cm, which was better than those of two-probe measurement by 10 times. At the same values of the current between two-probe and four-probe, the net voltage applied inside the nanowire were extracted with calculated voltages at the contact. Four-probe current-gate voltage characteristics showed bigger tendencies than those of two-probe measurement at low temperatures, indicating the reduced gate dependence in two-probe measurements by the existence of the contact resistance.
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