Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code
Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code
- 주제(키워드) ICP Etcher , C2F6 Plasmas , SiO2 Etching , Run-to-Run Control
- 발행기관 한국화학공학회
- 발행년도 2005
- 총서유형 Journal
- UCI G704-000406.2005.22.6.003
- KCI ID ART001119171
- 본문언어 영어
초록/요약
A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.
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