집적화된 3 극형 탄소 나노 튜브 전자 방출원의 제작 : Fabrication of Integrated Triode-type CNT Field Emitters
Fabrication of Integrated Triode-type CNT Field Emitters
- 주제(키워드) CNT , Field emitter , Triode , Sidewall protector
- 발행기관 한국전기전자재료학회
- 발행년도 2004
- 총서유형 Journal
- UCI G704-000026.2004.17.2.004
- KCI ID ART001089855
초록/요약
In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron emission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ㎛ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilting the substrate, we made CNTs emitters both with and without SiO2 layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.
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