MOS 구조에서의 원자층 증착 방법에 의한 Ta2O5 박막의 전기적 특성에 관한 연구
- 주제(키워드) Metal-Oxide-Semiconductor capacitor (MOS 커패시터) , Atomic Layer Deposition Method (원자층 증착 방법) , Scanning Electron Microscopy (주사 전자 현미경) , X-Ray Diffraction(X선 회절) , Metal-Oxide-Semiconductor capacitor (MOS 커패시터) , Atomic Layer Deposition Method (원자층 증착 방법) , Scanning Electron Microscopy (주사 전자 현미경) , X-Ray Diffraction(X선 회절)
- 발행기관 대한전기학회
- 발행년도 2003
- 총서유형 Journal
- UCI G704-C00119.2003.52.4.005
- KCI ID ART001006045
초록/요약
- In this work, we studied electrical characteristics and leakage current mechanism of Au/Ta2O5/Si MOS(Metal-Oxide-Semiconductor) devices. Ta2O5 thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 . The structures of the Ta2O5 thin films were examined by XRD(X-Ray Diffraction). From XRD, It is found that the structure of Ta2O5 is single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of Ta2O5 thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.4056 1014 ( ·㎝) at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.
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