Comparision of Nano-Porous Silicon Prepared by Photoelectrochemical Etching in HF-Ethanol and HF-Acetonitrile Solutions
Comparision of Nano-Porous Silicon Prepared by Photoelectrochemical Etching in HF-Ethanol and HF-Acetonitrile Solutions
- 주제(키워드) Nano-porous silicon , Photochemical etching , HF-acetonitrile
- 발행기관 한국물리학회
- 발행년도 2003
- 총서유형 Journal
- UCI G704-000411.2003.42.III.186
- KCI ID ART000990675
- 본문언어 영어
초록/요약
Nano-porous silicon(PSi) layers are prepared by photoelectrochemical etching of silicon wafer in aqueous hydrofluoric acid(HF) solution containing additive such as ethanol(C$_2$H$_5$OH), or acetonitrile(CH$_3$CN). The nano-PSi formed in HF-acetonitrile solution is more uniform and deeper than in HF-ethanol solution, {\it i.e.} ca. 2.23 and ca. 4.00 times for n- and p-type silicon wafer, respectively. The roughness of n-and p-type PSi prepared in HF-acetonitrile solution decreases to 43 and 95 \% compared with the sample formed in HF-ethanol solution, respectively. Also, the photoluminescence(PL) peak energy of PSi prepared in HF-acetonitrile solution altered to 2.03 eV compared with the sample formed in HF-ethanol solution with 1.93 eV. The depth of PSi layer and the roughness of PSi surface are improved due to surface tension and to unshared electron injection of acetonitrile.
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