RF 마그네트론 스퍼터링 법에 의한 증착된 SrBi2Nb2O9 박막의 Bi 량의 조절에 따른 특성분석 : Characteristics of the SrBi2Nb2O9 Thin Films Deposited by RF Magnetron Sputtering with Controlling of Bi Contents
Characteristics of the SrBi2Nb2O9 Thin Films Deposited by RF Magnetron Sputtering with Controlling of Bi Contents
- 주제(키워드) ferroelectric , bottom electrode , rf magnetron sputtering , remnant polariztion , SBN
- 발행기관 한국재료학회
- 발행년도 2002
- 총서유형 Journal
- UCI G704-000279.2002.12.12.007
- KCI ID ART000921162
초록/요약
The SrBi2Nb2O9 (SBN) thin films were deposited with SrNb2O6 (SNO) and Bi2O3 targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to Bi2O3 target were 100W:20W:100W:25W, and 100W:30W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi contednt in films. The Bi2Pt and Bi2O3 phase as second phases occured at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100W:25W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as 700℃ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value (2Pr) of the SBN films was obtained about 6μC/cm2 at 205kV/cm and the leakage current density of this thin film was 2.45×10-7 A/cm2 at an applied voltage of 3V.
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