Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials.
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주제(키워드)
DEFECTS
, Defects
, EFFECTS
, GERMANIUM
, Germanium
, INJECTION
, INTERFACE
, INTERSTITIALS
, ION-IMPLANTATION
, Ion-implantation
, LAYERS
, MONOLAYER
, Monolayer
, OXIDATION
, OXIDE
, Oxidation
, REACTIONS
, SILICON
, Silicon
, THIN
, ULTRA
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발행기관
University of Florida
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발행년도
2017
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학위명
박사
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학과 및 전공
Materials Science and Engineering
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UCI
I804:11009-000000157776
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DOI
10.23186/korea.000000157776.11009.0001083
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제출원본
PQDT10902821
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