Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-Hole Pair Creation Energy and Intrinsic Neutron Sensitivity.
주제(키워드)
ALPHA-PARTICLE DETECTOR
, Alpha-particle detector
, CHARACTERIZATION
, CREATION
, DETERMINATION
, DEVICES
, DIODE
, ELECTRON
, ENERGY
, FABRICATION
, FANO FACTOR
, Fano factor
, GALLIUM
, GALLIUM NITRIDE
, GAN
, GaN
, Gallium nitride
, HOLE
, INTRINSIC
, NEUTRON
, NEUTRON DETECTOR
, NITRIDE
, Neutron detector
, PAIR
, SCHOTTKY
, SENSITIVITY
, W-VALUE
, W-value
발행기관
The Ohio State University
발행년도
2015
학위명
박사
학과 및 전공
Nuclear Engineering
UCI
I804:11009-000000157630
DOI
10.23186/korea.000000157630.11009.0001097
제출원본
PQDT10891739
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