Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam.
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주제(키워드)
AMORPHOUS
, BEAM
, FABRICATION
, FILM
, FOCUSED
, GALLIUM
, INDIUM
, INDIUM GALLIUM ZINC OXIDE
, ION
, Indium gallium zinc oxide
, OXIDE
, PULSED LASER DEPOSITION
, Pulsed laser deposition
, THIN
, THIN FILMS TRANSISTORS
, TRANSISTOR
, Thin films transistors
, USING
, ZINC
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발행기관
North Carolina State University
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발행년도
2015
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학위명
박사
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UCI
I804:11009-000000146675
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DOI
10.23186/korea.000000146675.11009.0000969
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제출원본
PQDT10113080
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