Full Band Monte Carlo Simulation of Nanowires and Nanowire Field Effect Transistors.
- 주제(키워드) BAND , CARLO , DEVICE , Device , EFFECT , FIELD , FULL , FULL BAND , Full band , MONTE , MONTE CARLO , Monte carlo , NANOWIRE , NANOWIRES , Nanowires , SIMULATION , TIGHT BINDING , TRANSISTORS , Tight binding
- 발행기관 Arizona State University
- 발행년도 2016
- 학위명 박사
- 학과 및 전공 Electrical Engineering
- UCI I804:11009-000000146183
- DOI 10.23186/korea.000000146183.11009.0000962
- 제출원본 PQDT10146519
