검색 상세

Layer exfoliation behavior of hydrogen implanted silicon for kerf-free wafering.

초록/요약

Hydrogen ion implantation process which is used for SMART-CUT in semiconductor field is applied to fabricate Kerf-less ultra thin monocrystalline silicon wafer for solar cell. Hydrogen ions cause the fracture of wafer such as blistering, flaking and splitting behavior. The mechanisms of these behavior is investigated based of processing parameters such as wafer orientation, implantation energy and implantation dose. The fracture mechanism is adjustable mainly by controlling crack initiation and propagation. The defect distribution affects the cleaved surface. Crack nucleation and propagation is studied based on crystal plane due to the difference of surface binding energy. The implantation energy for target depth(≒50μm) was calculated by SRIM code. EPMA analysis showed that the calculated results, did not differ greatly not only a result of the implantation, with the results of the exfoliation. Splitting is occurred in <111> specimen hydrogen implanted with 6×1016 ions/cm2 after heat treatment at 700°C for 10min. Blistering is occurred in <100> specimen, which was implanted with same dose of split <111> specimen. As a result of heat treatment at higher temperatures(800°C), the <100> specimens implanted with the same dose, flaking is occurred. At higher dose condition(9×1016 ions/cm2), splitting is occurred at <100> specimen.

more

목차

1.Introduction 1
2.Literature review 5
1)Layer exfoliation via ion implantation 5
2)The stopping and range of ion in matter 25
3)Acoustic emission for nondestructive inspection 33
4)Objective 44
3.Experimental procedures 46
1)Ion implantation 46
2)Acoustic emission 58
3)Heat treatment 63
4)Analysis 65
(1)SEM observation 65
(2)EPMA observation 66
(3)SIMS analysis 67
4.Results and discussion 68
1 )Layer exfoliation behavior 68
(1)Hydrogen ion distribution 68
(2)Layer exfoliation 72
(3)Blsiering, flaking and splitting mechanism 81
2)Acoustic emission analysis 85
5.Conclusions 90
6.References 91

more