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Development of Receivers for Millimeter-wave and Terahertz Imaging Applications

  • 윤대근 (Daekeun Yoon, 대학원 전자전기공학과 전자전기컴퓨터공학전공)

초록/요약

Owing to advanced semiconductor technologies, there are growing interests in millimeter-wave and terahertz band which had not been used for practical applications. Among various millimeter-wave and terahertz applications, imaging is major application. Millimeter-wave and terahertz imaging are expected to be used in security or bio-medical applications, because millimeter-wave and terahertz radiation have high absorption rate on organic material such as human body, water, and food. Traditionally, millimeter-wave and terahertz imaging receivers had been developed with detecting components such as bolometer, Golay cell, and Schottky diode. Those detecting element is very expensive and should be used in well-controlled environment. Also, size of those detecting elements is large to be used for imaging array. To overcome problems of the traditional detecting elements, imaging receiver based on semiconductor technologies have been developed. With advances of semiconductor technologies, imaging receivers at millimeter-wave and terahertz band can be realized. Additionally, various kinds of circuits such as RF, analog, and digital circuits can be integrated into imaging receiver chip to improve performance and functionality of the imaging receiver. In this thesis, millimeter and terahertz imaging receivers based on semiconductor technologies at various frequency bands were developed. Both direct and heterodyne detection methods were applied to the imaging receivers. Images were acquired from the imaging receivers, if possible. Firstly, D-band direct and heterodyne imaging receivers based on CMOS and SiGe HBT technologies are described. CMOS direct detector and CMOS heterodyne imaging receiver were fabricated and characterized. In case of the CMOS heterodyne imaging receiver, pin hole was introduced to improve image quality. Also, D-band imaging receiver with front-end amplifier was developed in SiGe HBT technology. The front-end amplifier increases performance of the imaging receiver by about 10 times, compared with no front-end amplifier imaging receiver. Secondly, G-band heterodyne imaging receiver was developed with SiGe HBT technology. To be used in G-band, mixer in the imaging receiver was sub-harmonic mixer which takes third-harmonic of LO signal in mixing operation. Frequency of the LO was estimated as 64 GHz. Thirdly, various kinds of H-band imaging receivers were developed. H-band direct imaging receivers were developed with CMOS and SiGe HBT technology. In addition to those technologies, InP HBT based direct detector was developed. The InP HBT based detector showed high responsivity among similar detectors. Also, heterodyne imaging receivers based on CMOS and SiGe HBT technology were developed. Performance of direct and heterodyne detection imaging receiver was compared with SiGe HBT technology. The heterodyne imaging receiver showed better performance than the direct detection imaging. Finally, circuit components for the H-band imaging receiver were developed. Oscillator and amplifiers which can be used as LO and front-end amplifier for the H-band imaging receiver were designed and characterized.

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목차

Chapter 1. Introduction and Motivation -------------------------------------------------------- 1
1.1. Introduction ------------------------------------------------------------------------------ 1
1.2. Thesis Overview ------------------------------------------------------------------------- 7

Chapter 2. D-band Imaging Receivers ----------------------------------------------------------- 8
2.1. Direct Detection Imaging Receivers ------------------------------------------------- 8
2.1.1. A 145 GHz Imaging Detector based on 65 nm RFCMOS Technology --- 8
2.1.2. A D-band Active Imager in a SiGe HBT Technology ---------------------- 19
2.2. Heterodyne Imaging Receiver ------------------------------------------------------ 39
2.2.1. D-Band Heterodyne Integrated Imager in a 65 nm CMOS Technology ----------------------------------------------------------------------------------------- 39

Chapter 3. G-band Imaging Receivers --------------------------------------------------------- 48
3.1. Heterodyne Imaging Receivers ----------------------------------------------------- 48
3.1.1. A 200 GHz Heterodyne Imager in a SiGe BiCMOS Technology -------- 48

Chapter 4. H-band Imaging Receivers --------------------------------------------------------- 57
4.1. Direct Imaging Receiver ------------------------------------------------------------- 57
4.1.1. H-band Direct Imager in a 65 nm CMOS technology --------------------- 57
4.1.2. A Wideband H-Band Image Detector based on SiGe HBT Technology ----------------------------------------------------------------------------------------- 64
4.1.3. A H-band Image Detector based on InP HBT Technology ---------------- 71
4.2. Heterodyne Imaging Receiver ------------------------------------------------------ 76
4.2.1. H-band Heterodyne Imager in a 65 nm CMOS technology --------------- 76
4.2.2. Comparison of H-band Direct and Heterodyne Active Imager in a 0.13 μm SiGe HBT Technology --------------------------------------------------------- 80
4.3. Other Circuits for Imaging Applications ----------------------------------------- 98
4.3.1. A 310 GHz – 340 GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25 μm InP HBT Technology -------------------------------------------- 98
4.3.2. A Wideband 215 – 255 GHz CB Differential Amplifier in a 0.25 μm SiGe HBT Technology -------------------------------------------------------------- 107
4.3.3. 260 GHz Differential Variable Gain Amplifier based on SiGe HBT Technology -------------------------------------------------------------------- 114

Chapter 5. Conclusion --------------------------------------------------------------------------- 119

References ------------------------------------------------------------------------------------------ 122

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