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염료감응 태양전지의 전면전극 적용을 위한 TiO2/GZO 이중층 박막의 특성에 관한 연구

A Study on Characteristics of TiO2/GZO double layer for Front Electrode of Dye-Sensitized Solar Cells

초록/요약

Indium tin oxide (ITO) and Fluorine-doped tin oxide (FTO), which are used as Transparent Conducting Oxides (TCOs) thin film, are applied as electrode of Organic Light-Emitting Diode (OLED) and optoelectronic device of solar cell window layer because they have excellent electrical conductivity and optic penetrability. However, there is a growing need for the development of TCO with less indium or eco-friendly alternative materials without indium because of high price and toxicity of indium that is harmful to human body. Ga-doped ZnO (GZO), one of alternative materials, has the wide energy band gap of 3.3 eV and high penetration rate of over 80 % for the wavelength of visible ray and near-infrared ray. In addition, in case of GZO, it is very inexpensive and not toxic. However, it was reported that the electrical resistivity of GZO is unstable above 300 °C in air atmosphere. In this study, to improve thermal stability of GZO thin films at high temperature above 300 °C, an TiO2 thin film was deposited on the top of GZO thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of 300 °C, 400 °C, 500 °C in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented (002) peak, and the intensity of (002) peak nearly did not change both GZO (300 nm) single layer and TiO2 (50 nm)/GZO (300nm) double layer. The resistivity of GZO (300 nm) single layer increased from 7.6×10-4 Ωcm (RT) to 7.7×10-2 Ωcm (500 °C). However, in the case of the TiO2 (25 nm)/GZO (300 nm) double layer, resistivity showed small change from 7.9×10-4 Ωcm (RT) to 5.0×10-3 Ωcm (500 °C). Meanwhile, the average transmittance of all the films exceeded 80 % in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices such as Dye-Sensitized Solar Cell.

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목차

Abstract ⅰ
기호 및 약호 목록 ⅴ
그림 목차 ⅶ
표 목차 ⅹ

1. 서 론 1
2. 이론적 배경 3
2-1. 투명 전도성 산화막 3
2-2. ZnO 계열 투명 전도성 산화막 특성 4
2-2-1. ZnO의 특성 4
2-2-2. N-type Doping ZnO의 특성 7
2-2-3. Ga-doped ZnO의 특성 10
2-3. ZnO 계열 투명 전도성 산화막 활용 11
2-3-1. 염료감응 태양전지 11
2-3-2. 염료감응 태양전지 원리 16
2-3-3. 염료감응 태양전지 특성평가 19
3. 실험목적 및 방법 22
3-1. 실험목적 22
3-2. TiO2/GZO 박막 제작 23
3-2-1. 펄스 레이저 증착법 23
3-2-2. 펄스 레이저 증착법을 이용한 TiO2 barrier layer의 형성 26
3-3. 염료감응 태양전지 제작 28
3-3-1. 염료감응 태양전지 전면전극 28
3-3-2. 염료감응 태양전지 상대전극 28
3-3-3. 전면전극과 상대전극의 조립 29
4. 실험결과 및 고찰 31
4-1. 다층 구조의 박막 특성 분석 31
4-1-1. TiO2 박막의 구조적, 광학적 특성 31
4-1-2. 열처리 온도에 따른 GZO 박막의 전기적 특성 36
4-1-3. 열처리 온도에 따른 TiO2/GZO 이중층 박막의 전기적 특성 39
4-1-4. 열처리 온도에 따른 TiO2/GZO 이중층 박막의 구조적 성질 42
4-1-5. 열처리 온도에 따른 TiO2/GZO 이중층 박막의 미세구조 46
4-1-6. GZO 단일층과 TiO2/GZO 이중층 박막의 광학적 성질 49
4-2. 제작된 염료감응 태양전지의 성능평가 51
4-2-1. Photo-current 특성 분석 51
4-2-2. Dark-current 특성 분석 54
5. 결 론 56

참고문헌 58

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