A Study on the Growth Characteristics of Cr2O3 Thin Films by using RF Magnetron Sputtering
- 주제(키워드) Cr2O3 , thin films , RF magnetron sputtering , epitaxial growth
- 발행기관 고려대학교 대학원
- 지도교수 성태연
- 발행년도 2010
- 학위수여년월 2010. 2
- 학위구분 석사
- 학과 일반대학원 신소재공학과
- 원문페이지 66 p
- 실제URI http://www.dcollection.net/handler/korea/000000021421
- 본문언어 영어
- 제출원본 000045592403
초록/요약
We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using RF magnetron sputtering at room temperature followed by a rapid thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD theta-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square (rms) roughness of 0.112 - 0.288 nm.
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